Copper (Cu) Bonding Wire

Description

Copper (Cu) bonding wire is a type of wire used in the semiconductor industry for wire bonding applications. It is made from high-purity copper with a purity level of 99.99% or higher, and is available in various diameters ranging from 15 to 75 microns.

The wire bonding process involves using a wire bonding machine to bond the wire to the pads on the surface of a semiconductor device. The machine uses heat and pressure to create a metallic bond between the wire and the pad.

Copper bonding wire offers several advantages over other bonding materials, including high electrical conductivity, good thermal conductivity, and lower cost compared to gold or silver wire. Additionally, copper wire has a higher tensile strength than gold wire.

However, copper bonding wire also has some disadvantages, such as susceptibility to oxidation and lower reliability due to the formation of copper oxide during wire bonding. This can lead to issues such as reduced bond strength and increased wire resistance.

To overcome these challenges, manufacturers have developed various methods to mitigate the oxidation of copper wire during the bonding process. These methods include using an anti-oxidation layer on the surface of the wire or using a reducing atmosphere during the bonding process.

Overall, copper bonding wire is a widely used material in the semiconductor industry due to its high conductivity and lower cost compared to gold or silver wire. However, its use requires careful consideration of potential oxidation issues and proper mitigation methods to ensure optimal bonding performance and reliability.

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