Description
Epitaxial diode rectifier chips are a type of semiconductor device that is used to convert alternating current (AC) to direct current (DC) in electronic circuits. They are made using a process called epitaxy, which involves growing a thin layer of semiconductor material on top of a substrate to form a crystal structure.
In epitaxial diode rectifier chips, the thin layer of semiconductor material is typically made of silicon or gallium arsenide, and it is grown on top of a silicon substrate. The resulting crystal structure has different properties than the substrate, allowing the diode to function as a rectifier.
Epitaxial diode rectifier chips offer several advantages over other types of rectifiers, including high efficiency, low forward voltage drop, and low reverse leakage current. They are also capable of handling high current and high voltage levels, making them ideal for use in power supplies, motor drives, and other high-power applications.
VRRM(V) | Die Size | IF(AV)(A) | VF(V) | trr(ns) |
1260 | 7.218×5.0 | 60 | 2.0 | 90 |
640 | 1.52×1.52 | 6 | 1.40 | 25 |
1260 | 4.518×4.518 | 30 | 1.85 | 75 |
1260 | 2.569×2.569 | 8 | 2.50 | 30 |
660 | 6.60×6.60 | 75 | 1.35 | 65 |
350 | 2.59×5.17 | 30 | 1.25 | 30 |
420 | 1.60×1.60 | 8 | 1.10 | 25 |
640 | 2.40×2.40 | 10 | 1.30 | 35 |
1260 | 3.2×3.2 | 15 | 2.80 | 35 |
630 | 2.982×5.516 | 30 | 1.30 | 45 |
640 | 2.982×2.982 | 15 | 1.90 | 25 |
640 | 2.982×2.982 | 15 | 1.35 | 32 |
420 | 2.982×2.982 | 15 | 1.15 | 32 |
640 | 2.15×2.15 | 8 | 1.85 | 25 |
640 | 1.8×1.8 | 8 | 1.30 | 30 |
640 | 2.15×2.15 | 8 | 1.325 | 35 |
420 | 2.15×2.15 | 10 | 1.10 | 30 |
640 | 1.36×1.36 | 5 | 1.32 | 30 |
420 | 1.36×1.36 | 5 | 1.10 | 27 |
230 | 3.616×3.616 | 2×10 | 0.90 | 20 |
210 | 1.792×1.792 | 10 | 0.90 | 30 |
210 | 1.65×1.65 | 8 | 0.90 | 30 |
210 | 1.45×1.45 | 6 | 0.90 | 30 |
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