IR Emitter Chips
Description
An IR (infrared) emitter chip is a type of semiconductor device that is designed to emit infrared radiation. These chips are commonly used in a variety of applications, including remote controls, optical sensors, and industrial automation.
IR emitter chips typically consist of a p-n junction diode that emits IR radiation when forward biased. The diode is typically made from a material such as gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs) and is coated with a layer of material that enhances the emission of IR radiation. This layer can be made from a variety of materials, such as silicon carbide (SiC) or aluminum oxide (Al2O3).
There are two main types of IR emitter chips: surface-mounted and through-hole. Surface-mounted emitter chips are designed to be mounted directly onto a printed circuit board (PCB), while through-hole emitter chips are designed to be mounted into a hole in the PCB.
IR emitter chips are available in a range of wavelengths, from 850 nanometers (nm) to 1550 nm, and can emit IR radiation in either a narrow or broad beam pattern. They can also be modulated to transmit digital data using techniques such as pulse-width modulation (PWM).
IR emitter chips will emit IR light in the range of 2-15um. They are used in industrial gas detection and medical gas analysis. Another application is monitoring explosive and hazardous gases in petrochemical, chemical and oil industry and CO2 gas in building automation.
| Power | 0.35 | W |
| Housing Temperature | 200 | °C |
| Active Area | 1.0 x 1.0 | mm² |
| Active Area Temperature | 750 | °C |
| Hot Resistant | 25 ± 5 | Ω |
| Temperature Coefficient ¹ | typ. 1000 | ppm/K |
| Time Constant | typ. 8 | ms |
| Nominal Power Consumption | 250 | mW |
| Operation Voltage ² | typ. 2.5 | V |
| Operation Current ² | typ. 100 | mA |
| Active Area Temperature 3,5 | 600 | °C |
| Spectral Output Range 6 | typ. 2 - 15 | µm |
| Mass | ~ 1 | g |
| Housing | TO46 (modified) | |
| Expected Lifetime 4,5 | > 10,000 h at 700 °C> 100,000 h at 600 °C | |
| Power | 900 | mW |
| Housing Temperature | 200 | °C |
| Active Area | 2.2 x 2.3 | mm² |
| Active Area Temperature | 800 | °C |
| Hot Resistant | 19 ± 5 | Ω |
| Temperature Coefficient ¹ | typ. 1250 | ppm/K |
| Time Constant | typ. 15 | ms |
| Nominal Power Consumption | 600 | mW |
| Operation Voltage ² | typ. 3.4 | V |
| Operation Current ² | typ. 175 | mA |
| Active Area Temperature 3,5 | 650 | °C |
| Spectral Output Range 6 | typ. 2 - 15 | µm |
| Mass | ~ 1 | g |
| Housing | TO39 (modified) | |
| Expected Lifetime 4,5 | > 5,000 h at 800 °C > 100,000 h at 650 °C | |
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