A multi-pixel PbSe (lead selenide) near-IR detector is a type of photodetector that is sensitive to near-infrared (NIR) radiation, and it consists of an array of individual PbSe pixels that can detect NIR radiation.
The basic operation of the PbSe detector is the same as for the PbS version, with each pixel consisting of a thin layer of lead selenide that absorbs NIR radiation, causing electrons to be excited and generate a photocurrent. However, in a multi-pixel detector, each pixel operates independently, allowing for the detection of NIR radiation across a range of wavelengths and intensities.
Multi-pixel PbSe near-IR detectors offer several advantages over single-pixel detectors, including higher spatial resolution, a wider spectral range, and the ability to detect NIR radiation over a larger area. They are also relatively low-cost and can be used in a variety of applications such as gas sensing, medical imaging, and spectroscopy.
However, multi-pixel PbSe detectors also have some limitations. Like multi-pixel PbS detectors, they are more susceptible to noise than single-pixel detectors due to the larger number of pixels and the resulting increase in electrical connections. They are also sensitive to temperature fluctuations, which can affect their performance.
Electrical and optical characteristics per pixel
|Element temperature [°C]||Peak wavelength λP |
|20% cut-off |
|Peak (620 Hz, 1 Hz)[cm·Hz½/W]||Time constant |
|Dark resistance RD |
|22||3.8||4.5||1.8 ∙ 1010||1 ∙ 1010||4||0.3 - 20|
Possible mechanical characteristics:
• Number of lines 1 - 4
• Number of pixels 2 - 16
• Minimum pixel width 20 µm
• Minimum pixel height 20 µm
• Minimum pixel pitch 50 µm
• Minimal chip length 3000 µm
• Minimal chip height 3000 µm
Exemplary mechanical characteristics
|1||12||200||180x1800||-30 to +70|