Description
A single-pixel PbS (lead sulfide) near-IR detector is a type of photodetector that is sensitive to near-infrared (NIR) radiation. PbS detectors are made of a thin layer of lead sulfide deposited on a substrate, and they are used to detect the presence of infrared radiation in the range of 1 to 3 micrometers.
The PbS detector works by absorbing NIR radiation, which causes electrons in the lead sulfide layer to be excited to a higher energy state, resulting in the generation of a photocurrent. The magnitude of the photocurrent is proportional to the intensity of the incident radiation, allowing the detector to measure the amount of NIR radiation present.
Single-pixel PbS near-IR detectors have several advantages over other types of detectors, including high sensitivity and low noise. They are also relatively inexpensive and can be used in a wide range of applications such as gas detection, spectroscopy, and environmental monitoring.
However, the main disadvantage of PbS detectors is that they are sensitive to temperature fluctuations, which can affect their performance. To overcome this, PbS detectors are often cooled to reduce thermal noise and improve their sensitivity.
Electrical and optical characteristics
Active area [1mm x mm] | Peak responsivity [V/W] | |
Typ. | Min. | |
0.5 x 0.5 | 16 ∙ 105 | 10 ∙ 105 |
1 x 1 | 8 ∙ 105 | 5.6 ∙ 105 |
2 x 2 | 4 ∙ 105 | 2.8 ∙ 105 |
3 x 3 | 3 ∙ 105 | 1.8 ∙ 105 |
6 x 6 | 1.4 ∙ 105 | 0.9 ∙ 105 |
10 x 10 | 0.6 ∙ 105 | 0.4 ∙ 105 |
1 x 5 | 3.5 ∙ 105 | 2 ∙ 105 |
Element temperature [°C] | Peak wavelength λP [µm] | 20% cut-off wavelength λC [µm] | Peak (620 Hz, 1 Hz)[cm·Hz½/W] | Time constant [µs] | Dark resistance RD [MΩ] | |
Typ. | Typ. | Typ. | Min. | Typ. | ||
22 | 2.7 | 2.9 | 1 ∙ 1011 | 0.8 ∙ 1011 | 200 | 0.3 - 3 |
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