A Distributed Bragg Reflector (DBR) laser diode chip is a type of laser diode chip that uses a grating structure to reflect light back and forth in the active region of the laser diode chip. The grating structure consists of multiple layers of alternating materials with different refractive indices, which form a periodic variation in the refractive index of the material.
When a voltage is applied across the p-n junction of the DBR laser diode chip, electrons and holes are injected into the active region, where they recombine and emit photons. The photons are then reflected back and forth by the grating structure, resulting in a narrow spectral linewidth and a single longitudinal mode.
DBR laser diode chips are widely used in telecommunications and sensing applications because they offer a high degree of spectral stability, a narrow linewidth, and a high output power. They are also less prone to mode hopping than FP laser diode chips and can be fabricated with high precision using semiconductor processing techniques.
To improve the performance of DBR laser diode chips, various techniques such as tapered gain regions and lateral current injection have been developed to reduce the threshold current and improve the output power. Additionally, external cavity techniques such as fiber Bragg gratings (FBGs) can be used to further stabilize the emission wavelength and enhance the output power.
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