High Power Laser Diode Bars, Stacks and Arrays

High Power Laser Diode Bars, Stacks and Arrays

Description

High Power Laser Diode Bars, Stacks and Arrays(добавить)

High Power Laser Diode Bars, Stacks and Arrays are semiconductor devices that are designed to produce high optical power in a compact package. They are used in a wide range of applications including material processing, medical and aesthetic treatments, and military and aerospace systems.

Laser diode bars consist of multiple individual laser diode chips that are mounted on a common substrate. The diodes are arranged in a linear array and each diode emits light perpendicular to the substrate. The output power of a single diode is typically between a few milliwatts to a few watts. However, by combining multiple diodes in a bar, the output power can be increased to tens or even hundreds of watts.

Laser diode stacks are similar to laser diode bars, but they consist of multiple bars stacked on top of each other. This increases the output power even further, typically up to several kilowatts. Laser diode stacks are commonly used in industrial material processing applications such as welding, cutting, and drilling.

Laser diode arrays are similar to laser diode bars, but instead of a linear array, they consist of multiple rows of laser diodes. The output power of an array can be several kilowatts or more, making them suitable for applications such as pumping solid-state lasers or as direct sources of light for high-intensity lighting.

The fabrication process of high-power laser diode bars, stacks, and arrays is similar to that of single laser diodes, but with additional steps to bond the individual diodes to the substrate and connect them electrically. The heat generated by the high output power of these devices must be managed carefully to avoid damaging the laser diodes. Therefore, high-power laser diode bars, stacks, and arrays are typically mounted on heatsinks or cooled using water or other cooling fluids.

Wavelength Bandwidth Output power Beam divergence Chip Length Apreture width Iop Mount
1080nm 80nm 3W 18deg 4mm 230um 7A C-mount
1120nm 50nm 3W 35deg 4mm 230um 5A  
650nm 10nm 0.25W tbd 2mm tbd 0.75A  
690nm 10nm 0.25W tbd 2mm tbd 1A  
765nm 6nm 1.5W tbd 2.75mm tbd 3A  
780nm 20nm 1W tbd 2.75mm tbd 3A  
780nm 10nm 2W tbd 4mm tbd 4A  
780nm 20nm 3W tbd 4mm tbd 4.5A  
795nm 20nm 2W tbd 4mm tbd 4A  
808nm 15nm 1W tbd 4mm tbd 2.5A  
808nm 10nm 2W tbd 4mm tbd 4A  
830nm 30nm 2.5W tbd 4mm tbd 2.5A  
850nm 30nm 0.5W tbd 2.75mm tbd 1.5A  
852nm 20nm 2W tbd 4mm tbd 3.2A  
880nm 20nm 0.5W tbd 2.75mm tbd 1.5A  
915nm 20nm 1.5W tbd 2.75mm tbd 3A  
960nm 20nm 2W tbd 4mm tbd 3.2A  
980nm 30nm 0.5W tbd 2.75mm tbd 1.8A

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