High power laser diode sources working in continuous mode are composed of several laser diode emitters mounted on monolithic circle or semi-circle panel. Compact and rigid heat sink is easily attached to heat exchanger, thus the temperature of the circle or semi-circle laser diode array can be regulated for wavelength tuning. The arrays are used for laser systems that require high output power such as solid state pumped lasers, medical therapy equipment, graphics and materials machining.
Semi-circle and circle array laser diode stacks are high-power semiconductor laser devices that consist of multiple laser diodes integrated into a single package in a semi-circle or circular configuration. These devices are commonly used in materials processing, medical equipment, printing, and imaging applications where high output power and beam quality are required.
Each laser diode in a semi-circle or circle array stack typically contains several individual laser emitters, and the total output power of the device can range from a few watts to hundreds of watts, depending on the number of laser diodes and the design of the device.
The fabrication process for semi-circle and circle array laser diode stacks is similar to that of other laser diode chips and modules. It involves epitaxial growth of the active and cladding layers on a substrate, followed by lithography and etching to define the device structure. The individual laser diodes are then formed by cleaving or dicing the device into smaller pieces, each containing one or more laser emitters.
The semi-circle or circle configuration of the laser diodes in the stack can provide better coupling of the output light into an optical fiber or other delivery system compared to linear or vertical stacks, as the output beams can be arranged in a circular pattern. In addition, the circular configuration can provide more uniform heat dissipation and longer device lifetimes.
Semi-circle and circle array laser diode stacks can be designed to emit light in a continuous wave (CW) mode or in a pulsed mode, depending on the specific application requirements.
|Output power (W)||QCW 100~500*N|
|Center wavelength at 25 °C (nm)||808|
|Number of bars in one stack||1~20|
|Bar pitch (mm)||0.8~3|
|Center wavelength variation at 25 °C (nm)||±3/±10|
|Typical spectral bandwidth (FWHM)||<3|
|Divergence (degree) (FWHM)||<39⊥<10‖|