Description
Single emitter laser diode chips are usually Fabry- Perot or FP LD chips. Single emitter laser diode chips are available in a range of wavelengths from UV to IR.
Single Emitter Laser Diode Chips are semiconductor devices that emit coherent light from a single optical cavity. They are used in a wide range of applications, including fiber optic communications, laser printing, barcode scanning, and laser pointers.
The active region of a single emitter laser diode chip consists of a thin layer of semiconductor material with a high refractive index, typically gallium arsenide (GaAs) or indium phosphide (InP). The active region is surrounded by a lower refractive index material, typically aluminum gallium arsenide (AlGaAs) or indium gallium arsenide (InGaAs), which serves as the cladding layer. The combination of the active region and the cladding layer creates a waveguide that confines the light to a narrow path along the device.
The operation of a single emitter laser diode chip is based on the stimulated emission process, where photons are emitted from the active region when the electrons and holes are recombined. When a forward voltage is applied to the device, electrons are injected into the active region, and they combine with the holes to generate photons. These photons are reflected back and forth between the reflective facets at either end of the device, causing them to be amplified and emitted as coherent light.
Single emitter laser diode chips are designed to emit light in a narrow spectral range, typically in the near-infrared or visible range. The output power of a single emitter laser diode chip is typically between a few milliwatts and several watts, depending on the design and size of the device.
The fabrication process for single emitter laser diode chips typically involves epitaxial growth of the active and cladding layers, followed by lithography and etching to define the device structure. The facets are then formed by cleaving or polishing the device, which allows for the reflection of the light and the creation of the optical cavity.
Single emitter laser diode chips are used in a wide range of applications, including fiber optic communications, laser printing, barcode scanning, and laser pointers, as well as in scientific research and industrial applications.
Wavelength, nm | Output power | Current/voltage | Emitting width, um | Size, um |
---|---|---|---|---|
638 | 1W | 1.4A/2.1V | 110 | 1500x400x150 |
755 | 8W | 8A/1.9V | 350 | 2500x500x150 |
808 | 3W | 3A/1.9V | 150 | 1000x500x150 |
808 | 10W | 10A/1.8V | 190 | 4000x500x150 |
808 | 10.5W | 10A/1.8V | 350 | 2500x500x150 |
880 | 10W | 12A/1.8V | 190 | 2500x500x150 |
880 | 9.8W | 10A/1.8V | 350 | 2500x500x150 |
905 | 25W | 7A/7.2V | 74 | 750x400x150 |
905 | 50W | 14A/7.6V | 150 | 750x400x150 |
905 | 75W | 20A/8.4V | 200 | 750x400x150 |
905 | 25W | 20A/3.8V | 200 | 750x400x150 |
905 | 15W | 5A/9.2V | 38 | 750x400x150 |
905 | 25W | 8A/8.2V | 70 | 750x400x150 |
905 | 75W | 22A/9.5V | 300 | 750x400x150 |
905 | 100W | 22A/11V | 300 | 750x400x150 |
915 | 12W | 12A/1.6V | 96 | 4800x500x150 |
915 | 20W | 20A/1.7V | 190 | 4000x500x150 |
940 | 12W | 12A/1.6V | 96 | 4800x500x150 |
940 | 20W | 20A/1.7V | 190 | 4000x500x150 |
976 | 10W | 10A/1.8V | 96 | 4800x500x150 |
976 | 12W | 12A/1.6V | 96 | 4800x500x150 |
976 | 15.5W | 15A/1.6V | 190 | 4000x500x150 |
976 | 20W | 20A/1.7V | 190 | 4000x500x150 |
1064 | 10W | 14A/0.9V | 190 | 4000x500x150 |
1064 | 10W | 13A/1.6V | 350 | 2500x500x150 |
1470 | 1.5W | 4A/1.4V | 96 | 1000x500x150 |
1470 | 3W | 9A/1.5V | 96 | 2000x500x150 |
1550 | 1.5W | 4A/1.4V | 96 | 1000x500x150 |
1550 | 3W | 9A/1.5V | 96 | 2000x500x150 |
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