Single Emitter Laser Diode Chips

Single Emitter Laser Diode Chips

Description

Single Emitter Laser Diode Chips

Single emitter laser diode chips are usually Fabry- Perot or FP LD chips. Single emitter laser diode chips are available in a range of wavelengths from UV to IR.

Single Emitter Laser Diode Chips are semiconductor devices that emit coherent light from a single optical cavity. They are used in a wide range of applications, including fiber optic communications, laser printing, barcode scanning, and laser pointers.

The active region of a single emitter laser diode chip consists of a thin layer of semiconductor material with a high refractive index, typically gallium arsenide (GaAs) or indium phosphide (InP). The active region is surrounded by a lower refractive index material, typically aluminum gallium arsenide (AlGaAs) or indium gallium arsenide (InGaAs), which serves as the cladding layer. The combination of the active region and the cladding layer creates a waveguide that confines the light to a narrow path along the device.

The operation of a single emitter laser diode chip is based on the stimulated emission process, where photons are emitted from the active region when the electrons and holes are recombined. When a forward voltage is applied to the device, electrons are injected into the active region, and they combine with the holes to generate photons. These photons are reflected back and forth between the reflective facets at either end of the device, causing them to be amplified and emitted as coherent light.

Single emitter laser diode chips are designed to emit light in a narrow spectral range, typically in the near-infrared or visible range. The output power of a single emitter laser diode chip is typically between a few milliwatts and several watts, depending on the design and size of the device.

The fabrication process for single emitter laser diode chips typically involves epitaxial growth of the active and cladding layers, followed by lithography and etching to define the device structure. The facets are then formed by cleaving or polishing the device, which allows for the reflection of the light and the creation of the optical cavity.

Single emitter laser diode chips are used in a wide range of applications, including fiber optic communications, laser printing, barcode scanning, and laser pointers, as well as in scientific research and industrial applications.

Wavelength, nm Output power Current/voltage Emitting width, um Size, um
638 1W 1.4A/2.1V 110 1500x400x150
755 8W 8A/1.9V 350 2500x500x150
808 3W 3A/1.9V 150 1000x500x150
808 10W 10A/1.8V 190 4000x500x150
808 10.5W 10A/1.8V 350 2500x500x150
880 10W 12A/1.8V 190 2500x500x150
880 9.8W 10A/1.8V 350 2500x500x150
905 25W 7A/7.2V 74 750x400x150
905 50W 14A/7.6V 150 750x400x150
905 75W 20A/8.4V 200 750x400x150
905 25W 20A/3.8V 200 750x400x150
905 15W 5A/9.2V 38 750x400x150
905 25W 8A/8.2V 70 750x400x150
905 75W 22A/9.5V 300 750x400x150
905 100W 22A/11V 300 750x400x150
915 12W 12A/1.6V 96 4800x500x150
915 20W 20A/1.7V 190 4000x500x150
940 12W 12A/1.6V 96 4800x500x150
940 20W 20A/1.7V 190 4000x500x150
976 10W 10A/1.8V 96 4800x500x150
976 12W 12A/1.6V 96 4800x500x150
976 15.5W 15A/1.6V 190 4000x500x150
976 20W 20A/1.7V 190 4000x500x150
1064 10W 14A/0.9V 190 4000x500x150
1064 10W 13A/1.6V 350 2500x500x150
1470 1.5W 4A/1.4V 96 1000x500x150
1470 3W 9A/1.5V 96 2000x500x150
1550 1.5W 4A/1.4V 96 1000x500x150
1550 3W 9A/1.5V 96 2000x500x150

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