A Tapered Amplifier (TA) laser diode chip is a type of laser diode chip that combines a broad area (BA) section with a tapered section. The BA section provides high power and the tapered section provides beam shaping and high brightness.
When a voltage is applied across the p-n junction of the TA laser diode chip, electrons and holes are injected into the active region, where they recombine and emit photons. The photons are amplified as they travel through the BA section and are then directed into the tapered section. The tapered section gradually narrows the beam and collimates it into a narrow output beam with high brightness.
TA laser diode chips are widely used in applications where high brightness and high power are required, such as materials processing, pumping of solid-state lasers, and some medical applications. They are also used in some telecommunications and sensing applications that require a high output power and high brightness.
To improve the performance of TA laser diode chips, various techniques such as external cavity techniques and feedback control can be used to further stabilize the emission wavelength and enhance the output power. Additionally, various materials and doping profiles can be used to optimize the performance of the BA and tapered sections.
Tapered amplifier or TA LD chips contain a tapered part that increases the cross section of the beam. These chips are used in narrow linewidth laser systems for metrology and spectroscopy and in RGB sources. TA LD chips have very high quality of beam.
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