Vertical Cavity Surface Emitting (VCSEL) Laser Diode Chips

Vertical Cavity Surface Emitting (VCSEL) Laser Diode Chips

Description

Vertical Cavity Surface Emitting (VCSEL) Laser Diode Chips

Vertical Cavity Surface Emitting Lasers (VCSELs) are a type of semiconductor laser diode that emits light perpendicular to the surface of the semiconductor chip. This is in contrast to traditional edge-emitting lasers, which emit light parallel to the surface of the chip.

VCSELs have several advantages over traditional edge-emitting lasers. They have a smaller footprint, consume less power, and have a narrower beam divergence, making them more suitable for applications such as fiber optic communication, laser printing, and sensing.

The basic structure of a VCSEL consists of two semiconductor mirrors sandwiching an active region that emits light when a voltage is applied. The mirrors are typically made of distributed Bragg reflectors (DBRs), which are periodic structures that reflect light of a specific wavelength. The active region is usually a thin layer of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) that emits light when excited by an electric field.

VCSELs can be fabricated using a variety of techniques, including molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The process involves growing multiple layers of semiconducting materials on a substrate, followed by lithography and etching to form the desired structure.

In addition to their advantages in communication and sensing applications, VCSELs have also found use in consumer electronics, such as facial recognition and depth sensing in smartphones, and optical mice for computers.

Data Rate Wavelength Output power Quantities Mode
28Gb/s (NRZ) 850nm 4mW single chip, 4x and 12x array
56Gb/s (PAM-4) 850nm 4mW single chip, 4x and 12x array
56Gb/s (NRZ) 850nm 4mW single chip, 4x and 12x array
112Gb/s (PAM-4) 850nm 4mW single chip, 4x and 12x array
795nm 0.13mW single aperture Single Mode
895nm 0.2mW single aperture Single Mode
680nm  7mW single aperture Multi Mode
940nm 10mW 3 apertures Multi Mode
850nm 0.5W 100 apertures Multi Mode
850nm 2W 281 apertures Multi Mode
850nm 2W 550 apertures Multi Mode
850nm 4W 770 apertures Multi Mode
850nm 6W 1672 apertures Multi Mode
940nm 2W 281 apertures Multi Mode
940nm 3W 550 apertures Multi Mode
940nm 4W 550 apertures, 2-junction/3-junction Multi Mode
940nm 4W 770 apertures Multi Mode
940nm 6W 1672 apertures Multi Mode
5Gb/s 850nm  2mW single aperture Multi Mode
14Gb/s 850nm 2mW single chip, 4x-array Multi Mode
5Gb/s 850nm 2.5mW single aperture Multi Mode
10Gb/s 850nm 5mW single aperture Multi Mode
25Gb/s 850nm 5mW single aperture Multi Mode
680nm 3.5mW single aperture Multi Mode
850nm 4mW single aperture Multi Mode
850nm 120mW 20 apertures Multi Mode
850nm 170mW 30 apertures Multi Mode
850nm 0.5W 90 apertures Multi Mode
850nm 1W 208 apertures Multi Mode
850nm 3W 625 apertures Multi Mode
850nm 2W 840 apertures Multi Mode
850nm 4W 1680 apertures Multi Mode
940nm 0.6-4W single chip Multi Mode

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