PIN Photodiode Chips

Description

A PIN photodiode chip is a type of photodiode that has an intrinsic layer (I) sandwiched between a p-type semiconductor (P) and an n-type semiconductor (N). The PIN structure creates a larger depletion region compared to a conventional p-n junction photodiode, which results in higher sensitivity and lower noise.

PIN photodiode chips are commonly used in applications where high sensitivity and low noise are required, such as in optical communication systems, biomedical imaging, and spectroscopy. They have a wide spectral response range and can detect light with wavelengths ranging from ultraviolet (UV) to near-infrared (NIR).

The operation of a PIN photodiode chip is similar to that of a conventional p-n junction photodiode. When light strikes the depletion region, it creates electron-hole pairs, which are then swept across the depletion region by the electric field. The resulting current is proportional to the intensity of the incident light.

PIN photodiode chips are designed to operate in both photovoltaic (zero-bias) and photoconductive (reverse-bias) modes. In photovoltaic mode, the output current is generated without an external bias voltage. In photoconductive mode, a reverse bias voltage is applied to the photodiode, which increases the size of the depletion region and thus the sensitivity of the photodiode.

InGaAs and GaAs compound semiconductor PIN-PD chips are mainly used in fiberoptics communication, spectroscopy, in analytical and measurement instruments, precision photometry. They can be produced in top and bottom illuminated versions, have AR coatings or optical filters to focus on desired wavelength sensitivity, and be manufactured in arrays up to 24 photodiodes.

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