General Schottky diode chips are a type of semiconductor device that are widely used in electronic circuits for their low forward voltage drop and fast switching speeds. They are named after the Schottky barrier, which is the metal-semiconductor interface that forms the basis of their operation.
Schottky diode chips are made from a metal (usually platinum or gold) that is deposited onto a semiconductor material (usually silicon or gallium arsenide) to form a rectifying junction. Unlike traditional PN junction diodes, Schottky diodes have a lower forward voltage drop due to the absence of majority carrier injection across the metal-semiconductor junction.
Schottky diode chips are commonly used in applications that require high efficiency and high switching speeds, such as power rectification, voltage regulation, and RF circuits. They are also used in digital logic circuits and as protection devices in electronic systems.
Schottky diode chips are available in various configurations and packages to suit different application requirements. They can be designed to operate at different voltage and current levels, and they can be used in various topologies such as half-bridge, full-bridge, and flyback converters.
General Schottky diode chips are constructed on N-type semiconductor and metal electrode bonded to the semiconductor form junction that gives advantages to schottky diode chips compared to regulat P-N junction diode chips. The advantage is faster switching time and lower bias voltage. One disadvantage that Schottky diode chips have is higher reverse leakage current and lower breakdown voltage.
|Size (mil)||VBR(V)||IR@VR(μA)||VR(V)||VF@IF(V) ||IF(A) ||Tjm(℃） ||IFSM(A) ||IRSM(A) ||HTIR@VR ||HTRB ||HBM(KV) ||MM(KV) ||IEC(KV) |
|28||56-58||5||45||0.58||1||125||30||2||30mA@40V 125℃||2.0mA@32V 125℃||8||2||2|
|30||56-58||10||45||0.54||1||125||30||2||30mA@40V 125℃||2.5mA@32V 125℃||8||2||2|
|32||56-58||12||45||0.52||1||125||30||2||40mA@40V 125℃||3.0mA@32V 125℃||8||2||2|
|28||72-76||5||65||0.68||1||125||30||1-мая||30mA@65V 125℃||2.0mA@48V 125℃||8||2||2|
|32||72-76||10||65||0.62||1||125||30||1-мая||30mA@65V 125℃||3.0mA@48V 125℃||8||2||2|
|28||120-132||2||105||0.83||1||125||30||1||50mA@105V 110℃||1mA@80V 125℃||8||2||2|
|30||120-132||10||105||0.82||1||125||30||1||50mA@105V 110℃||3mA@80V 125℃||8||2||2|
|32||120-132||10||105||0.8||1||125||30||1||50mA@105V 110℃||3.5mA@80V 125℃||8||2||2|
|40||52-56||12||45||0.52||2||125||60||2||30mA@40V 110℃||6.5mA@32V 125℃||8||2||2|