Low Barrier Schottky Diode Chips

Description

Low barrier Schottky diode chips (LBSD) are a type of semiconductor device that are similar to traditional Schottky diodes, but with a much lower barrier height at the metal-semiconductor junction. This low barrier height allows for much lower forward voltage drops and higher current densities than traditional Schottky diodes.

LBSD chips are typically made from a metal with a low work function, such as aluminum, titanium, or nickel, that is deposited onto a semiconductor material, such as silicon, to form the rectifying junction. The lower barrier height allows for the injection of minority carriers into the semiconductor, which increases the current density and reduces the forward voltage drop.

LBSD chips are commonly used in applications where low forward voltage drop and high current densities are required, such as in power rectifiers and high-frequency mixers. They are also used in detectors and photodiodes, where the low barrier height can enhance the efficiency of photon detection.

LBSD chips are available in a variety of configurations and packages to suit different application requirements. They can be designed to operate at different voltage and current levels, and they can be used in various topologies such as half-bridge, full-bridge, and flyback converters.

Low barrier Schottky diode chips have applications in mixers, modulators, doublers. The main application is wave shaping, modulation, switching and rectification. The advantage of shottky diode chips is very low voltage drop. Shottly diodes are constructed on doped N-type silicon and bonded metal.

Order Form