THz Low Barrier Diode Chips

Description

THz low barrier diode chips are a type of electronic component used in terahertz frequency range circuits. These diodes are designed to have a low barrier height between the metal and semiconductor layers, which allows them to operate efficiently at terahertz frequencies.

The low barrier height of these diodes is achieved by using specific semiconductor materials with low effective masses of electrons and holes. These materials include InP, InGaAs, and InAlAs. The low barrier height allows for high electron velocity and low effective masses of carriers, which enables efficient operation at high frequencies.

THz low barrier diode chips are commonly used in various applications, such as in terahertz mixers, detectors, and oscillators. They can be used to detect or generate terahertz radiation and can be designed to operate at different frequencies, depending on the specific application requirements.

THz low barrier diode chips are available in a range of sizes and packages, depending on the specific application requirements. They can be designed to operate at different voltages and currents, and can be used in various topologies such as shunt and series connections.

Thz low barrier diode chips are optimized for use in mmWave and sub-mmWave electronics. The applications are zero bias detectors, frequency mixers, and high frequency rectifiers. The parameters are defined and binned according to customer requirements and need to be stipulated individually. The chips are suitable to flip chip mounting due to high resistivity to short term high temperature impact up to 250C.

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