THz Varistor Diode Chips

THz Varistor Diode Chips

Description

THz Varistor Diode Chips

THz varistor diode chips are a type of electronic component that is used in terahertz frequency range circuits. They are designed to protect electronic devices from transient voltage spikes and surges, which can cause damage to the device or affect its performance.

Varistor diodes, also known as metal oxide varistors (MOVs), are made of a semiconductor material, typically zinc oxide (ZnO), that has a nonlinear current-voltage characteristic. When a voltage surge occurs, the varistor diode's resistance decreases, allowing it to conduct current and divert the excess voltage away from the protected device.

THz varistor diode chips are specifically designed to operate at terahertz frequencies, which are between 100 GHz and 10 THz. They are typically made using a specialized semiconductor material, such as GaAs or InP, and have a unique design that allows them to operate at such high frequencies.

THz varistor diode chips can be used in a variety of applications, such as in THz imaging and sensing systems, as well as in THz communication systems. They are commonly used to protect THz devices, such as amplifiers and mixers, from voltage spikes that can occur in the circuit.

THz varistor diode chips are available in a range of sizes and packages, depending on the application requirements. They can be designed to operate at different voltages and have different clamping voltages, which is the voltage at which the diode begins to conduct.

Thz varistor diode chips are used in mmWave and subWW wave electronics and serve for circuit protection from transient voltages. The Thz varistor diode chips are used in radiometry, measurement instruments, frequency mixers and multipliers.

Size (mil) VBR(V) IR@VR(μA) VR(V) VF@IF(V)
IF(A)
Tjm(℃)
IFSM(A)
IRSM(A)
HTIR@VR
HTRB
HBM(KV)
MM(KV)
IEC(KV)
32 31-32 20 25 0.44 1 125 30 2 30mA@25V 125°c   8 2 2
28 56-58 5 45 0.58 1 125 30 2 30mA@40V 125℃ 2.0mA@32V 125℃ 8 2 2
30 56-58 10 45 0.54 1 125 30 2 30mA@40V 125℃ 2.5mA@32V 125℃ 8 2 2
32 56-58 12 45 0.52 1 125 30 2 40mA@40V 125℃ 3.0mA@32V 125℃ 8 2 2
28 72-76 5 65 0.68 1 125 30 1,5 30mA@65V 125℃ 2.0mA@48V 125℃ 8 2 2
32 72-76 10 65 0.62 1 125 30 1,5 30mA@65V 125℃ 3.0mA@48V 125℃ 8 2 2
28 120-132 2 105 0.83 1 125 30 1 50mA@105V 110℃ 1mA@80V 125℃ 8 2 2
30 120-132 10 105 0.82 1 125 30 1 50mA@105V 110℃ 3mA@80V 125℃ 8 2 2
32 120-132 10 105 0.8 1 125 30 1 50mA@105V 110℃ 3.5mA@80V 125℃ 8 2 2
40 52-56 12 45 0.52 2 125 60 2 30mA@40V 110℃ 6.5mA@32V 125℃ 8 2 2
45 125-130 0.2 105 0.81 3 175 90 5 0.3mA@105V 150℃ 0.25mA@105V 125℃ 15 4 8
51 125-130 0.2 105 0.8 3 175 90 5 0.3mA@105V 150℃ 0.15mA@105V 125℃ 15 4 8
55 125-130 0.2 105 0.79 3 175 90 5 0.3mA@105V 150℃ 0.2mA@105V 125℃ 15 4 8
60 125-130 0.5 105 0.78 3 175 90 5 0.3mA@105V 150℃ 0.5mA@105V 125℃ 15 4 8
68 125-130 1 105 0.78 5 175 150 5 0.3mA@105V 150℃ 2.0mA@105V 150℃ 15 4 8
71 125-130 1 105 0.77 5 175 150 5 0.3mA@105V 150℃ 2.0mA@105V 150℃ 15 4 8
98 52-54 200 45 0.5 12 150 360 2 50mA@45V 110℃℃ 30mA@16V 135℃ 20 4 30
120 52-54 200 45 0.49 15 150 450 2 50mA@45V 110℃ 30mA@16V 135℃ 20 4 30
150 52-54 300 45 0.48 20 150 600 2 100mA@45V 110℃℃ 10mA@16V 100℃℃ 20 4 30
68 43-45 330 40 0.39 3 100 90 5 20mA@ 100℃   20 4 20
90 43-45 84 40 0.42 5 120 150 5A 40mA@ 120℃   20 4 20
72 43-45 200 40 0.44 5 120 150 5 15mA@40V 100℃   20 4 20
16 55 4 40 0.35 0.001                
16 100 8 100 0.4 0.01                
16 75 8 70 0.4 0.001                
16 55 4 40 0.4 0.001                
18 55 5 30 0.24 0.001                
19 20 3 5 0.2 0.001              

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