Zirconia oxide (ZrO2) ceramic substrates are a type of ceramic substrate that are used in a variety of applications due to their excellent mechanical, thermal, and electrical properties.
ZrO2 ceramic substrates have a high mechanical strength and toughness, making them ideal for use in applications that require resistance to wear and abrasion, such as cutting tools, ball bearings, and dental implants. They also have a high thermal shock resistance and can withstand rapid temperature changes, making them ideal for use in high-temperature applications.
In addition, ZrO2 ceramic substrates have a high electrical resistivity and dielectric strength, making them suitable for use in high-voltage applications. They can be manufactured in various sizes and shapes, including square, rectangular, and cylindrical shapes, and can be metallized to create conductive paths for electrical signals.
ZrO2 ceramic substrates also exhibit a unique property known as "transformation toughening," where they can undergo a transformation from a monoclinic to a tetragonal crystal structure under stress, resulting in an increase in toughness and resistance to fracture.
ZrO2 (Zirconia Oxide) is a unique material that has a range of excellent physical and mechanical properties such as high mechanical strength, high thermal expansion coefficient, high bending and tensile strength, high corrosion and wears stability.
Due to the high thermal expansion coefficient ZrO2 ceramic is often used as a buffer material in multilayer substrates and as the main substrate for metallization, because its thermal conductivity is close to copper. This property allows to make metalized ceramic substrates without buffer layers.
|Bulk density||g / cm3||3.95|
|Surface roughness (Ra)||micron||0.20|
|Polished surface roughness (Ra)||micron||<0.05 td="">|
|Hardness||kg / mm 2||fifteen|
|Thermal expansion coefficient (40-800 ° C)||∙ 10 -6 / ° C||8.4|
|Thermal conductivity (25 ° C)||W / m ∙ ° K||27|
|Specific heat||J / kg ∙ ° K||720|
|Dielectric constant (1 MHz)||-||9.0|
|Dielectric loss (1MHz, 25 ° C)||∙ 10 -4||3|
|(Cu 127 - 450 μm, protective coatings)|
|Thick film technology||X|
|(Ag, Au, Ag-Pd, Ag-Pd-Pt, Ni - from 12 to 100 microns)|
|Thin film technology||X|
|(guides on request)|
|Distance between scribing lines, mm||2.00 ± 0.05|
|Minimum hole diameter, mm||0.20 ± 0.05|