AII-BVI Compounds: CdSe

AII-BVI Compounds: CdSe


AII-BVI Compounds: CdSe

CdSe is a compound consisting of cadmium (Cd) and selenium (Se). It is a II-VI semiconductor with a direct bandgap of 1.7 eV at room temperature. CdSe has a zincblende crystal structure and is a widely used material in optoelectronic devices such as solar cells, photodetectors, and light-emitting diodes (LEDs). CdSe quantum dots, which are nanocrystals of CdSe, are also used in various applications including bioimaging, sensing, and quantum computing.

Growth methods:
Vertical Bridgman
Diameter, mm
Thickness, mm
Optical absorption (bulk) at 10,6 nm, cm-1
< 0.0015
Resistivity, Ohm x cm
Luminescent emission intensity ration, IEx/Iedge (Iimp)
Dislocation density, cm-2
Small-angle boundary density, cm-1
Excition band wavelength in luminescence spectrum, nm
690 ± 2
The variation of local values for wavelength within the plate, nm
The number of cavities with size of 15 - 200 m, pcs/pl

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