AII-BVI Compounds: CdSSe

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AII-BVI Compounds: CdSSe

Description

CdSSe is a ternary compound made of cadmium (Cd), sulfur (S), and selenium (Se). It is a semiconductor with tunable bandgap and is often used in optoelectronic devices such as solar cells and light-emitting diodes (LEDs). CdSSe can be grown as single crystals or thin films using various techniques such as molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), and atomic layer deposition (ALD). The bandgap of CdSSe can be tuned by adjusting the S-to-Se ratio during growth, making it a useful material for a wide range of applications.

Specification

Material	CdS_xSe_1-x
Growth methods:	PVT
Diameter, mm	50
Thickness, mm	30
Optical absorption (bulk) at 10,6 nm, cm^-1	-
Resistivity, Ohm x cm	-
Luminescent emission intensity ration, I_Ex/I_edge (I_imp)	> 10
Dislocation density, cm^-2	< 2 x 10⁴
Small-angle boundary density, cm^-1	< 20
Excition band wavelength in luminescence spectrum, nm	510 ± 5, 535 ± 10, 560 ± 10, 600 ± 5, 615 +5/-15, 505 ± 5, 625 ± 5
The variation of local values for wavelength within the plate, nm	± 1
The number of cavities with size of 15 - 200 m, pcs/pl	<= 10

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