AII-BVI Compounds: CdSSe

AII-BVI Compounds: CdSSe


AII-BVI Compounds: CdSSe

CdSSe is a ternary compound made of cadmium (Cd), sulfur (S), and selenium (Se). It is a semiconductor with tunable bandgap and is often used in optoelectronic devices such as solar cells and light-emitting diodes (LEDs). CdSSe can be grown as single crystals or thin films using various techniques such as molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), and atomic layer deposition (ALD). The bandgap of CdSSe can be tuned by adjusting the S-to-Se ratio during growth, making it a useful material for a wide range of applications.

Growth methods:
Diameter, mm
Thickness, mm
Optical absorption (bulk) at 10,6 nm, cm-1
Resistivity, Ohm x cm
Luminescent emission intensity ration, IEx/Iedge (Iimp)
> 10
Dislocation density, cm-2
< 2 x 104
Small-angle boundary density, cm-1
< 20
Excition band wavelength in luminescence spectrum, nm 510 ± 5, 535 ± 10, 560 ± 10, 600 ± 5, 615 +5/-15, 505 ± 5, 625 ± 5
The variation of local values for wavelength within the plate, nm
± 1
The number of cavities with size of 15 - 200 m, pcs/pl
<= 10

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