AII-BVI Compounds: CdTe

AII-BVI Compounds: CdTe


AII-BVI Compounds: CdTe

CdTe is a binary compound of cadmium and tellurium, with the chemical formula CdTe. It is a direct bandgap semiconductor with a bandgap energy of 1.44 eV at room temperature, which makes it a promising material for photovoltaic solar cells and other optoelectronic devices. CdTe is also used in the production of radiation detectors, infrared optics, and high-temperature thermoelectric devices. Additionally, CdTe is used as a substrate for the growth of other semiconductors, such as HgCdTe for infrared detectors.

Growth methods:
Diameter, mm
Thickness, mm
Optical absorption (bulk) at 10,6 nm, cm-1
5-10 x 10-4
Resistivity, Ohm x cm
Luminescent emission intensity ration, IEx/Iedge (Iimp)
Dislocation density, cm-2
Small-angle boundary density, cm-1
Excition band wavelength in luminescence spectrum, nm
The variation of local values for wavelength within the plate, nm
The number of cavities with size of 15 - 200 m, pcs/pl

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