AII-BVI Compounds: ZnS
AII-BVI Compounds: ZnS
Description
Zinc sulfide (ZnS) is an AII-BVI compound with a zincblende crystal structure. It is a wide-bandgap semiconductor with a direct bandgap of 3.68 eV at room temperature, which makes it useful in optoelectronic applications such as light-emitting diodes (LEDs), photovoltaic cells, and photodetectors.
ZnS can be doped with impurities such as copper, silver, and manganese to create p-type and n-type semiconductors. It can also be alloyed with other AII-BVI compounds such as cadmium sulfide (CdS) to form ternary compounds such as zinc cadmium sulfide (ZnCdS), which have tunable bandgaps and are used in solar cells and other optoelectronic devices.
ZnS can be grown as single crystals using techniques such as the chemical vapor transport method or the high-pressure Bridgman method. It can also be grown as thin films using techniques such as pulsed laser deposition, sputtering, and atomic layer deposition.
| Material | ZnS |
| Growth methods: | Vertical Bridgman |
| Diameter, mm | 40 |
| Thickness, mm | 30 |
| Optical absorption (bulk) at 10,6 nm, cm-1 | < 0.15 |
| Resistivity, Ohm x cm | - |
| Luminescent emission intensity ration, IEx/Iedge (Iimp) | - |
| Dislocation density, cm-2 | - |
| Small-angle boundary density, cm-1 | - |
| Excition band wavelength in luminescence spectrum, nm | - |
| The variation of local values for wavelength within the plate, nm | - |
| The number of cavities with size of 15 - 200 m, pcs/pl | - |
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