AII-BVI Compounds: ZnSe

info@semi-el.com

AII-BVI Compounds: ZnSe

Description

Zinc Selenide (ZnSe) is an AII-BVI compound, which means it is composed of a group II element (Zinc) and a group VI element (Selenium). It is a semiconductor material with a wide bandgap of 2.7 eV, which makes it transparent in the infrared region. ZnSe is a useful material for a variety of applications, including optoelectronics, infrared optics, and laser systems. It has a cubic crystal structure and is commonly grown as a single crystal using techniques such as chemical vapor deposition (CVD) or physical vapor transport (PVT). ZnSe has a high refractive index and low dispersion, making it ideal for lenses and other optical components operating in the infrared region.

Specification

Material	ZnSe
Growth methods:	PVT
Diameter, mm	50
Thickness, mm	10
Optical absorption (bulk) at 10,6 nm, cm^-1	< 0.005
Resistivity, Ohm x cm	-
Luminescent emission intensity ration, I_Ex/I_edge (I_imp)	> 10
Dislocation density, cm^-2	< 2 x 10⁵
Small-angle boundary density, cm^-1	< 40
Excition band wavelength in luminescence spectrum, nm	444 ± 2
The variation of local values for wavelength within the plate, nm	-
The number of cavities with size of 15 - 200 m, pcs/pl	-

Order Form

About Semiconductor Electronics

SEMI EL project is a global supplier of materials, equipment, spare parts and supplies for the semiconductor industry.

Learn more...

Get In Touch

Email: info@semi-el.com