AII-BVI Compounds: ZnTe

AII-BVI Compounds: ZnTe


AII-BVI Compounds: ZnTe

Zinc Telluride (ZnTe) is an AII-BVI compound, which means it is composed of a group II element (Zinc) and a group VI element (Tellurium). It is a semiconductor material with a relatively narrow bandgap of 2.26 eV, which makes it transparent in the infrared region. ZnTe is a useful material for a variety of applications, including optoelectronics, infrared optics, and solar cells. It has a cubic crystal structure and is commonly grown as a single crystal using techniques such as molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). ZnTe has a high refractive index and low dispersion, making it ideal for lenses and other optical components operating in the infrared region. It is also used as a substrate for the growth of other semiconductor materials, such as cadmium telluride (CdTe).

Growth methods:
Seeded Vapor Phase
Diameter, mm
Thickness, mm
Optical absorption (bulk) at 10,6 nm, cm-1
Resistivity, Ohm x cm
Luminescent emission intensity ration, IEx/Iedge (Iimp)
Dislocation density, cm-2
Small-angle boundary density, cm-1
< 10
Excition band wavelength in luminescence spectrum, nm
The variation of local values for wavelength within the plate, nm
The number of cavities with size of 15 - 200 m, pcs/pl

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