Nonlinear Crystals: AGSe

Nonlinear Crystals: AGSe

Description

Nonlinear Crystals: AGSe

AGSe (Silver Gallium Selenide) is a type of nonlinear crystal that is used for frequency conversion in the infrared and terahertz ranges. It has a high nonlinear coefficient and good transparency in the infrared and terahertz regions, making it a popular choice for many applications.

AGSe can be used for both sum frequency generation (SFG) and difference frequency generation (DFG). In SFG, two input laser beams of different wavelengths are combined in the AGSe crystal, resulting in a new output beam with a frequency equal to the sum of the input frequencies. This process is useful for producing radiation in the terahertz range, which has important applications in spectroscopy, sensing, and imaging.

In DFG, two input laser beams of different wavelengths are mixed in the AGSe crystal, resulting in a new output beam with a frequency equal to the difference between the input frequencies. DFG is useful for generating tunable infrared radiation, which has applications in spectroscopy, sensing, and imaging.

AGSe crystals can also be used in optical parametric oscillators (OPOs), which are devices that generate coherent light at a new frequency by using an input laser beam and a nonlinear crystal. OPOs using AGSe crystals are useful for producing tunable infrared and terahertz radiation, which has important applications in spectroscopy and imaging.

AGSe is a relatively new nonlinear crystal, but its high nonlinear coefficient and good transparency in the infrared and terahertz ranges make it a promising material for many applications. However, the quality of AGSe crystals can be highly dependent on the growth conditions, and they can be expensive and difficult to obtain in large sizes.

Transparency range, µm 0.71 - 18
Point group 4m2
Lattice parameters, Å a = 5.9921, c = 10.883 Å
Density, g/cm3 5.71
Mohs hardness 3.0 - 3.5
Refractive indexes:  
at 1.06 µm no = 2.7010; ne = 2.6792
at 3.0 µm no = 2.6245; ne = 2.5925
at 5.3 µm no = 2.6134; ne = 2.5808
at 10.6 µm no = 2.5912; ne = 2.5579
at 12 µm no = 2.5837; ne = 2.5505
Non-linear coefficient at 10.6 µm, pm/V d36 = 33
Walk off 0.68° at 5.3 µm
Optical damage threshold at 10.6 µm, 150 ns, MW/cm2 10 - 20
Thermal expansion coefficient  
parallel to c-axis 16.8 x 10-6 x °C-1
perpendicular to c-axis -7.8 x 10-6 x °C-1

Order Form

Drag and drop files here or Browse
*You can upload your specification file here. Max 5MB. Allowed File Types: JPG, PNG, PDF

About Semiconductor Electronics

SEMI EL project is a global supplier of materials, equipment, spare parts and supplies for the semiconductor industry.

Learn more...

Get In Touch

 Email: info@semi-el.com

Join Our Community

Sign up to receive email for the latest information.