Single Crystal Substrates: Sapphire
Single Crystal Substrates: Sapphire
Description
Sapphire is a single crystal substrate with a hexagonal crystal structure and the chemical formula Al2O3. It has a high melting point of 2040°C, high thermal conductivity, and excellent mechanical and chemical stability, which make it a popular substrate material in many applications.
Sapphire is transparent in the visible to near-infrared range and has a high refractive index, which makes it useful for optical applications such as windows, lenses, and prisms. It also has a wide bandgap of 9.7 eV, which makes it useful in high-power electronics and optoelectronics applications.
Sapphire can be grown as bulk crystals using the Kyropoulos method or the Czochralski method, or as thin films using techniques such as pulsed laser deposition, chemical vapor deposition, and molecular beam epitaxy. It is commonly used as a substrate material in the growth of other single crystal materials such as gallium nitride (GaN) for use in high-power electronics and optoelectronics.
Typical specifications:
4" sapphire substrates for Nitride based devices
| Material: | High purity optical grade monocrystalline Kyropoulos Al2O3 |
| Orientation: | C-axis [0001] ± 0.1° or any off-orientation ±0.1° towards M-axis or A-axis |
| Diameter: | 100 ± 0.05 mm |
| Thickness: | 430, 500 or 725 ± 25 µm |
| TTV: | < 20 µm |
| Bow: | < 10 µm |
| Front Surface: | Epi-polished |
| Backside: Or: | Fine ground Optically polished |
| Flatness: | < 10 µm |
| Surface Roughness (Ra): | < 0.2 nm |
| Orientation Flat: | 32.5 mm ± 1.0 mm |
| Primary Flat Location: Or: | A-axis [11-20] ± 0.5° M-axis [10-10] ± 0.5° |
| Secondary Flat (on request): | 90° counterclockwise to Primary flat |
| Package: | Single wafer pack or 25 wafers EMPAK Ultrapack cassette |
Silicon-on-Sapphire wafers:
| Substrate diameter, mm | 50.8 ± 0.1, 76 ± 0.5 or 100 ± 0.5 |
| Substrate orientation | (-1012) R ± 0.5° |
| Substrate thickness, µm | 330-430 ± 25, 450 ± 25 or 460 ± 25 |
| Silicon layer orientation | (100) |
| Back side | Ground |
| 1. Gages applications | |
| Thickness of heteroepitaxial layer, µm | 0.5 - 5.0 ± 8% |
| Conductivity type of heteroepitaxial layer | P (Boron) |
| Resistivity of Silicon film, Ohm | 10 - 30 ± 8% |
| 2. IC's application | |
| Thickness of heteroepitaxial layer, µm | 0.1 - 1.0 ± 8% |
| Conductivity type of heteroepitaxial layer | n (Phosphorous), p (Boron), i (Intrinsic - undoped) |
| Specific resistivity, Ohm x cm | 1 - 200 |
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