Gallium Arsenide (GaAs) is a binary III-V semiconductor compound consisting of gallium (Ga) and arsenic (As). It has a zinc blende crystal structure and is a direct bandgap semiconductor. GaAs is widely used in the semiconductor industry for the manufacture of various electronic and optoelectronic devices such as high-speed transistors, diodes, lasers, and solar cells. Its high electron mobility makes it suitable for high-frequency and high-power applications. GaAs can also be doped with various impurities to tune its electrical and optical properties.