Single Crystals of A3B5 Group: GaAs:Te

Description

GaAs:Te is a single crystal compound consisting of gallium, arsenic, and tellurium. The dopant tellurium is used to increase the n-type conductivity of GaAs, making it suitable for various electronic and optoelectronic devices. GaAs:Te has a high electron mobility and a direct bandgap, making it suitable for high-speed electronic devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). It is also used in optoelectronic devices such as light-emitting diodes (LEDs), laser diodes, and solar cells.

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