Description
GaAs:Te is a single crystal compound consisting of gallium, arsenic, and tellurium. The dopant tellurium is used to increase the n-type conductivity of GaAs, making it suitable for various electronic and optoelectronic devices. GaAs:Te has a high electron mobility and a direct bandgap, making it suitable for high-speed electronic devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). It is also used in optoelectronic devices such as light-emitting diodes (LEDs), laser diodes, and solar cells.
| Substrates |
GaAs:Te
|
| Resistivity, om.cm |
-
|
| Dia |
1,2511
|
| Orientation |
(100)
|
| Carrier Concentration, cm-3 |
2 x 1017
|
| Mobility, cm2/V.Sec |
4500
|
| Grown technology |
-
|
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