Single Crystals of A3B5 Group: GaAs:Zn

Single Crystals of A3B5 Group: GaAs:Zn

Description

Single Crystals of A3B5 Group: GaAs:Zn

GaAs:Zn is a type of zinc-doped gallium arsenide single crystal. Zinc is commonly used as a p-type dopant in GaAs to improve its electrical properties for various electronic and optoelectronic applications. The doping concentration of zinc in GaAs can range from low levels of 1x10^16/cm^3 to high levels of 1x10^19/cm^3, depending on the application. GaAs:Zn has been used in the fabrication of high-performance p-type GaAs-based devices such as light-emitting diodes (LEDs), photodetectors, and solar cells.

Substrates
GaAs:Zn
Resistivity, om.cm
-
Dia
1,511
Orientation
-
Carrier Concentration, cm-3
1.0 x 1019
Mobility, cm2/V.Sec
-
Grown technology
Cz

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