Description
GaAs:Zn is a type of zinc-doped gallium arsenide single crystal. Zinc is commonly used as a p-type dopant in GaAs to improve its electrical properties for various electronic and optoelectronic applications. The doping concentration of zinc in GaAs can range from low levels of 1x10^16/cm^3 to high levels of 1x10^19/cm^3, depending on the application. GaAs:Zn has been used in the fabrication of high-performance p-type GaAs-based devices such as light-emitting diodes (LEDs), photodetectors, and solar cells.
Substrates | GaAs:Zn |
Resistivity, om.cm | - |
Dia | 1,511 |
Orientation | - |
Carrier Concentration, cm-3 | 1.0 x 1019 |
Mobility, cm2/V.Sec | - |
Grown technology | Cz |
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