Single Crystals of A3B5 Group: InP:Zn

Single Crystals of A3B5 Group: InP:Zn

Description

Single Crystals of A3B5 Group: InP:Zn

InP:Zn is a single crystal of the A3B5 group, which is doped with Zn impurities. The addition of Zn impurities to InP leads to the creation of p-type semiconductor material. InP:Zn can be used in a variety of electronic and optoelectronic applications, such as solar cells, transistors, and laser diodes. InP:Zn has a high electron mobility, which makes it useful for high-frequency applications. It also has a direct bandgap, which makes it an attractive material for optoelectronics.

Substrates
InP:Zn
Resistivity, om.cm
-
Dia
1,011 - 1,2511
Orientation
(100), (111)
Carrier Concentration, cm-3
(0.2 - 1.0) x 1018
Mobility, cm2/V.Sec
50 -70
Grown technology
-

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