Description
InP:Zn is a single crystal of the A3B5 group, which is doped with Zn impurities. The addition of Zn impurities to InP leads to the creation of p-type semiconductor material. InP:Zn can be used in a variety of electronic and optoelectronic applications, such as solar cells, transistors, and laser diodes. InP:Zn has a high electron mobility, which makes it useful for high-frequency applications. It also has a direct bandgap, which makes it an attractive material for optoelectronics.
Substrates | InP:Zn |
Resistivity, om.cm | - |
Dia | 1,011 - 1,2511 |
Orientation | (100), (111) |
Carrier Concentration, cm-3 | (0.2 - 1.0) x 1018 |
Mobility, cm2/V.Sec | 50 -70 |
Grown technology | - |
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