InP:Zn is a single crystal of the A3B5 group, which is doped with Zn impurities. The addition of Zn impurities to InP leads to the creation of p-type semiconductor material. InP:Zn can be used in a variety of electronic and optoelectronic applications, such as solar cells, transistors, and laser diodes. InP:Zn has a high electron mobility, which makes it useful for high-frequency applications. It also has a direct bandgap, which makes it an attractive material for optoelectronics.