Single Crystals of A3B5 Group: InP:Zn

Single Crystals of A3B5 Group: InP:Zn


Single Crystals of A3B5 Group: InP:Zn

InP:Zn is a single crystal of the A3B5 group, which is doped with Zn impurities. The addition of Zn impurities to InP leads to the creation of p-type semiconductor material. InP:Zn can be used in a variety of electronic and optoelectronic applications, such as solar cells, transistors, and laser diodes. InP:Zn has a high electron mobility, which makes it useful for high-frequency applications. It also has a direct bandgap, which makes it an attractive material for optoelectronics.

1,011 - 1,2511
(100), (111)
Carrier Concentration, cm-3
(0.2 - 1.0) x 1018
Mobility, cm2/V.Sec
50 -70
Grown technology

Order Form

Drag and drop files here or Browse
*You can upload your specification file here. Max 5MB. Allowed File Types: JPG, PNG, PDF

About Semiconductor Electronics

SEMI EL project is a global supplier of materials, equipment, spare parts and supplies for the semiconductor industry.

Learn more...

Get In Touch


Join Our Community

Sign up to receive email for the latest information.