Description
InSb is a single crystal belonging to the A3B5 group of compounds. It has a zinc blende crystal structure and is a semiconductor with a narrow bandgap of 0.17 eV at room temperature. InSb has a high electron mobility and is commonly used in infrared detectors and photovoltaic cells operating in the mid-infrared spectral range. It is also used in high-speed electronics and spintronic devices due to its unique electronic properties. InSb is grown using techniques such as liquid-phase epitaxy (LPE) and molecular beam epitaxy (MBE).
Substrates | InSb |
Resistivity, om.cm | - |
Dia | - |
Orientation | (100), (111) |
Carrier Concentration, cm-3 | (8 - 30) x 1013 |
Mobility, cm2/V.Sec | - |
Grown technology | dopants are possible |
Order Form
SEMI EL project is a global supplier of materials, equipment, spare parts and supplies for the semiconductor industry.
Email: info@semi-el.com