InSb is a single crystal belonging to the A3B5 group of compounds. It has a zinc blende crystal structure and is a semiconductor with a narrow bandgap of 0.17 eV at room temperature. InSb has a high electron mobility and is commonly used in infrared detectors and photovoltaic cells operating in the mid-infrared spectral range. It is also used in high-speed electronics and spintronic devices due to its unique electronic properties. InSb is grown using techniques such as liquid-phase epitaxy (LPE) and molecular beam epitaxy (MBE).