Chemically Vapor Deposited Zinc Selenide (CVD ZnSe) is a high-quality optical material that is produced using a chemical vapor deposition process. This material is known for its high purity, low scattering, and excellent transmission properties in the infrared region of the electromagnetic spectrum.
The CVD process involves the reaction of a zinc precursor and a selenium precursor in a high-temperature reactor. The resulting gas phase reaction products are then deposited onto a substrate, typically a heated cylindrical graphite susceptor, where they react and form a thin film of ZnSe.
CVD ZnSe is a high-quality material that is used in various optical applications, including lenses, prisms, mirrors, and windows. It is particularly useful in infrared optical systems, where it exhibits low absorption and scattering losses, making it suitable for use in high-power laser systems.
CVD ZnSe is also used as a substrate material for the growth of epitaxial films of other materials, such as zinc sulfide (ZnS), cadmium selenide (CdSe), and other II-VI semiconductor compounds. These epitaxial films can be used in electronic and optoelectronic devices, such as solar cells, light-emitting diodes (LEDs), and photodetectors.
|Transmission range, nm||250 - 5000|
|Specific heat, W x s x g-1 x °K-1||0.59|
|Thermal conductivity, W x cm-1 x °K-1||0.14|
|Thermal expansion coefficient||6.9 x 10-6 x °K-1|
|Thermal shock resistance, W x m-1||790|
|Termooptical factor (dn/dT), at 633 nm||7.3 x 10-6 x °K-1|
|at 0.8 µm||1.8245|
|at 1.0 µm||1.8197|
|at 1.4 µm||1.8121|
Main Specifications of YAG Windows
|Orientation|| within 5°|
|Flatness||better than l/8@633nm|
|Parallelism||better than 30''|
|Perpendicularity||better than 5'|
|Scratch-Dig||20-10 per MIL-O-1383A|
|Wavefront Distortion||better than l/2 per inch@1064nm|