Lithium Niobate Thin Films (LNOI)

Lithium Niobate Thin Films (LNOI)


Lithium Niobate Thin Films (LNOI)

Lithium niobate thin films (LNOI) are a type of optical material made of a thin layer of lithium niobate deposited on a substrate using various deposition techniques such as sputtering or pulsed laser deposition. LNOI is a ferroelectric material that exhibits spontaneous polarization, making it useful in various applications such as optical modulators, filters, and switches.

One of the key advantages of LNOI is its high electro-optic coefficient, which allows for efficient modulation of light using an electric field. This property makes LNOI ideal for use in optical modulators, where changes in the refractive index of the material can be used to modulate the intensity or phase of light in optical communication systems.

LNOI thin films also have a high refractive index, making them useful in waveguide applications such as optical interconnects, sensors, and detectors. The high refractive index allows LNOI to confine and guide light, which can be used to create optical circuits that perform various functions.

Another advantage of LNOI thin films is their piezoelectric properties, which allow them to convert mechanical energy into electrical energy and vice versa. This property can be utilized in various applications such as sensors and energy harvesting devices.

LNOI thin films are a critical component in the development of advanced optical devices and systems. Their unique optical, electrical, and mechanical properties make them ideal for use in various applications, from telecommunications to biophotonics.

300-900 nm Lithium Niobate Thin Films (LNOI)
Top Functional Layer
Diameter 3, 4, (6) inch Orientation X, Z, Y etc.
Material LiNbO3 Thickness 300-900 nm
Doped (optional) MgO    
Isolation Layer
Material SiO2 Thickness 1000-4000 nm
Material Si, LN, Quartz, Fused Silica etc.
Thickness 400-500 μm
Optional Electrode Layer
Material Pt, Au, Cr Thickness  100-400 nm
Structure Above or Under SiO2 Isolation Layer
5-50 μm LN on Si
Top Functional Layer
Diameter 3, 4, 6 inch Orientation X, Z, Y-42, Y-46.3 etc.
Material LiNbO3 etc. Thickness 5-50 μm
Material Si
Thickness 230-500 μm
Free Standing Ultra Thin & Ultra Flat Wafers
Diameter 3, 4 inch Orientation X, Y, Z etc.
Thickness 10-60 um Material LN
Surface Double or Single Side Polished    
Customized Lithium Niobate Thin Films
Top Layer/ Details Substrate Details Top Layer Thin Films Details
Multi Layer Structure Patterned Electrode & Waveguide Different Material (SiO2/Si, Si, Sapphire, Quartz etc.) PPLN Special Size Electrode (Au, Pt, Cr, Al etc.) Orientation (Same as Bulk Wafers ) Doped (MgO, Fe, Er, Tm etc.)
100-1000 nm LiNbO3
5-50 um LiNbO3        


Question 1: 

I need LNOI wafer with the following specs: 50 nm Pure Si / 300 nm LN x-cut/ ~ 5 µm SiO2/ 500 µm Si (100) (any doping).

Question 2:

I need a wafer consisting of the following layers:
- 30nm crystalline - Si
- 300 nm LiNbO3 (or 300 nm Si3N4)
- 2 µm SiO2
- ~ 500 µm

The problem is crystalline Si on top, which I assume is not possible to make by deposition and all deposition methods create amorphous Si (Correct me if I am wrong). Can you produce such a wafer or a similar wafer?


The structure we can do: Si/SiO2 layer/x-cut LN thin film/Thermal Oxide/Si handle wafer, please refer to the sturcture and let me know the thickness of every layer you prefer. For the LNOI, we recommend x-cut, 360nm or 600nm LN/4.7um Thermal Oxide/Si, these two are our mass produced LNOIs, which cost would be lower than others. So the answer to you question is yes, provided we add oxide layer between LN and Si

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