Piezoelectric aluminum nitride (AlN) thin films are a type of thin film material that exhibits piezoelectric properties. These thin films are made by depositing a layer of AlN on a substrate using various deposition techniques such as sputtering or pulsed laser deposition.
Piezoelectric materials such as AlN exhibit a mechanical response to an applied electrical field, which allows them to convert electrical energy into mechanical energy and vice versa. This property makes them useful in various applications such as sensors, actuators, and energy harvesting devices.
One of the key advantages of AlN thin films is their high piezoelectric coefficient, which allows them to generate a strong mechanical response for a given electrical field. This makes AlN thin films suitable for use in high-performance sensors and actuators.
AlN thin films also have a high acoustic velocity and low acoustic loss, making them suitable for use in acoustic wave devices such as resonators and filters. The high acoustic velocity allows for high-frequency operation, while the low acoustic loss ensures that the device has low signal attenuation.
Another advantage of AlN thin films is their thermal stability, which allows them to operate in harsh environments at high temperatures. This makes them suitable for use in high-temperature sensors and actuators.