Silicon on Sapphire (SOS) Epitaxial Wafers

Silicon on Sapphire (SOS) Epitaxial Wafers


Silicone on Sapphire (SOS) Epitaxial Wafers

Silicon (Si) epitaxial wafers are thin layers of silicon crystals that are grown on a silicon substrate using a process called epitaxy. Epitaxy involves depositing a layer of silicon atoms onto a substrate by vapor deposition, where the atoms align themselves in a crystalline structure that is identical to the substrate. This creates a layer of high-purity silicon that can be used in various electronic applications.

Silicon epitaxial wafers are commonly used in the production of semiconductor devices, such as transistors, diodes, and integrated circuits. They are also used in the manufacture of solar cells, where the thin layer of epitaxial silicon acts as the active layer that absorbs sunlight and converts it into electrical energy.

The advantages of using silicon epitaxial wafers include their high purity, uniformity, and precise control over the thickness and doping level of the layer. This makes them ideal for use in advanced semiconductor devices, where even small variations in the properties of the material can have a significant impact on performance.

Overall, silicon epitaxial wafers are a critical component in the production of many electronic devices and play a crucial role in advancing technology and innovation in fields such as computing, telecommunications, and renewable energy.

Typical layer thickness is less than 1 micron. Silicon on sapphire epi wafers are available in 76, 100, 150 and 200 mm sizes.

Parameters range for Silicon on Sapphire (SOS) Epi Wafers
Wafer diameter 76 mm, 100 mm, 150 mm
Orientation (1012) ± 1º (R-plane)
Substrate dopant -
Epi-layer thickness, µm 0,3 - 2,0
Epi-layer dopant Phosphorous, Boron
Epi-layer resistivity,  
n-type according to spec.
p-type 1,0 - 0,01

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