Bulk-GaN Wafers

Description

Bulk-GaN (Gallium Nitride) wafers are a type of semiconductor material used in the production of high-power electronic and optoelectronic devices. GaN is a wide-bandgap semiconductor material, which means that it has a higher breakdown voltage and can operate at higher temperatures than conventional semiconductors such as silicon.

Bulk-GaN wafers are typically produced using a process called hydride vapor phase epitaxy (HVPE). In this process, a substrate made of sapphire or silicon carbide is heated in the presence of a source material containing gallium and nitrogen. The gallium and nitrogen react to form a thin GaN layer on the substrate. The process is repeated several times to form a thick layer of GaN on the substrate.

Once the GaN layer is grown, it is sliced into thin wafers and polished to a high degree of flatness and smoothness. The resulting Bulk-GaN wafers can then be used as a platform for the growth of additional semiconductor layers, which can be doped with impurities to create p-type and n-type regions for device fabrication.

Bulk-GaN wafers have several advantages over other semiconductor materials such as silicon. GaN has a higher electron mobility and saturation velocity than silicon, which means that it can operate at higher frequencies and with lower power consumption. Additionally, GaN has a wider bandgap than silicon, which makes it suitable for applications such as high-power electronic devices, high-frequency devices, and optoelectronic devices such as LEDs and laser diodes.

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