Description
GaAs wafers are grown by VGF (Vertical Gradient Freeze) method and are used for laser diode, LED and microwave semiconductors (MMIC, HBT, HEMT) applications. The substrates are supplied epi-polished and packaged in inert gas packing. Semi-insulating high resistance GaAs substrates are used for IR detectors, gamma photon detectors etc. We provide GaAs substrates 2-6 inch in diameter. Custom sizes and shapes are also available.
Gallium Antimonide (GaSb) wafers are a type of semiconductor material used in the production of electronic and optoelectronic devices that require high-speed and low-power operation. GaSb is a narrow-bandgap semiconductor material, which means that it has a smaller bandgap than conventional semiconductors such as silicon.
GaSb wafers are typically produced using the molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) methods. In the MBE method, a substrate made of GaSb is heated in a vacuum chamber and a source material, typically gallium and antimony, is heated until it vaporizes. The vapor is transported by a carrier gas, typically hydrogen, and deposited on the GaSb substrate, forming a single crystal GaSb layer. In the MOCVD method, a GaSb layer is deposited on a substrate by reacting a gas mixture containing gallium and antimony precursors at high temperatures.
Once the GaSb crystal is grown, it is sliced into thin wafers and polished to a high degree of flatness and smoothness. The resulting GaSb wafers can then be used as a platform for the growth of additional semiconductor layers, which can be doped with impurities to create p-type and n-type regions for device fabrication.
GaSb wafers have several advantages over other semiconductor materials such as silicon. GaSb has a higher electron mobility and a higher electron saturation velocity than silicon, which makes it suitable for high-speed electronic devices. Additionally, GaSb has a lower thermal conductivity and a lower thermal expansion coefficient than silicon, which makes it suitable for applications such as thermophotovoltaic devices and infrared detectors.
Item | Specifications | ||
Dopant | Undoped | Zinc | Tellurium |
Conduction Type | P-type | P-type | N-type |
Wafer Diameter | 2″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 500±25um | ||
Primary Flat Length | 16±2mm | ||
Secondary Flat Length | 8±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <10um | ||
BOW | <10um | ||
WARP | <12um | ||
Laser Marking | upon request | ||
Suface Finish | P/E, P/P | ||
Epi Ready | yes | ||
Package | Single wafer container or cassette |
Item | Specifications | ||
Conduction Type | P-type | P-type | N-type |
Dopant | Undoped | Zinc | Tellurium |
Wafer Diameter | 3″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 600±25um | ||
Primary Flat Length | 22±2mm | ||
Secondary Flat Length | 11±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <12um | ||
BOW | <12um | ||
WARP | <15um | ||
Laser marking | upon request | ||
Suface finish | P/E, P/P | ||
Epi ready | yes | ||
Package | Single wafer container or cassette |
Item | Specifications | ||
Conduction Type | P-type | P-type | N-type |
Dopant | Undoped | Zinc | Tellurium |
Wafer Diameter | 4″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 800±25um | ||
Primary Flat Length | 32±2mm | ||
Secondary Flat Length | 18±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <12um | ||
BOW | <12um | ||
WARP | <15um | ||
Laser marking | upon request | ||
Suface finish | P/E, P/P | ||
Epi ready | yes | ||
Package | Single wafer container or cassette |
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Email: info@semi-el.com