Description
Germanium (Ge) wafers and substrates are a type of semiconductor material used in the production of electronic and optoelectronic devices such as transistors, diodes, and solar cells. Germanium is a Group IV element and has a crystalline structure similar to silicon, but with some important differences in its physical properties.
Germanium wafers and substrates are typically produced using the Czochralski (CZ) method, where a seed crystal is dipped into a melt of molten germanium and slowly pulled out while rotating. The molten germanium solidifies and forms a single crystal as the seed crystal is pulled out.
Once the germanium crystal is grown, it is sliced into thin wafers and polished to a high degree of flatness and smoothness. The resulting germanium wafers and substrates can then be used as a platform for the growth of additional semiconductor layers, which can be doped with impurities to create p-type and n-type regions for device fabrication.
Germanium wafers and substrates have several advantages over other semiconductor materials such as silicon. Germanium has a higher electron mobility than silicon, which means that it can operate at higher frequencies and with lower power consumption. Additionally, germanium has a narrower bandgap than silicon, which makes it suitable for applications such as near-infrared photodetectors and solar cells.
Overall, germanium wafers and substrates are an important semiconductor material for a wide range of electronic and optoelectronic applications, particularly those requiring high-speed performance in the near-infrared wavelength range.
Ge wafers are offer in sizes 2 inch and 4 inch and are used in microelectrinics, optoelectrincs, optics. Ge wafers are used to manufacture solar cells for space and terrestrial applications, optical lens, light emitting diodes (LED) and photodetectors.
Item | Unit | Semiconduct Specifications | |
---|---|---|---|
Crystal Growth Method | CZ | ||
Conduct Type | (n-type) | (p-type) | |
Dopant | As,Sb | Ga | |
Diameter | inch | 2",3",4" and 6" | |
Wafer Orientation | (100)±0.5° | ||
OF/IF | US,EJ | ||
Laser Marking | /cm3 | Upon request | |
Thickness | μm | (175-500)±25 | |
Resistivity (at RT) | ohm.cm | 0.005-30 | 0.005-0.04 |
Etch Pit Density (EPD) | /cm2 | - | 0 |
TTV | μm | ≤15 | ≤15 |
Warp | μm | ≤25 | ≤25 |
Backside Ra | μm | <0.1 | <0.1 |
Surface | Side1/Side2 | E/E, P/E, P/D | |
Epi-ready | Yes | ||
Package | Cassette or single wafer container |
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