Indium Antimonide (InSb) wafers are a type of semiconductor material used in the production of electronic and optoelectronic devices that operate in the mid-infrared range. InSb is a narrow-bandgap semiconductor material, which means that it has a smaller bandgap than conventional semiconductors such as silicon.
InSb wafers are typically produced using the liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) methods. In the LPE method, a substrate made of InSb is immersed in a molten solution containing indium and antimony. The substrate is then slowly pulled out of the solution, allowing a single crystal InSb layer to grow on the substrate. In the MBE method, a substrate made of InSb is heated in a vacuum chamber and a source material, typically indium and antimony, is heated until it vaporizes. The vapor is transported by a carrier gas, typically hydrogen, and deposited on the InSb substrate, forming a single crystal InSb layer.
Once the InSb crystal is grown, it is sliced into thin wafers and polished to a high degree of flatness and smoothness. The resulting InSb wafers can then be used as a platform for the growth of additional semiconductor layers, which can be doped with impurities to create p-type and n-type regions for device fabrication.
InSb wafers have several advantages over other semiconductor materials such as silicon. InSb has a high electron mobility and a high electron saturation velocity, which makes it suitable for high-speed electronic devices. Additionally, InSb has a large absorption coefficient in the mid-infrared range, which makes it suitable for applications such as infrared detectors and imaging systems.
|Conductivity||P/(Zn-doped or un-doped), N/Te-doped|
|Orientation Flat mm||16±2||22±1||32.5±1|
|Identification Flat mm||8±1||11±1||18±1|
|Mobility cm2/V.s||200-3500 or as required|
|Carrier Concentration cm-3||(1-100)E17 or as required|
|TTV μm max||15||15||15|
|Bow μm max||15||15||15|
|Warp μm max||20||20||20|
|Dislocation Density cm-2 max||500||1000||2000|
|Surface Finish||P/E, P/P||P/E, P/P||P/E, P/P|
|Packing||Single wafer container sealed in Aluminum bag.|