Indium Phosphide (InP) Wafers

Indium Phosphide (InP) Wafers and Substrates


Indium Phosphide (InP) Wafers

Indium phosphide (InP) wafers and substrates are a type of semiconductor material used in the production of high-speed electronic devices and optoelectronic components such as lasers, photodiodes, and solar cells. InP has a high electron mobility and a direct bandgap, which make it suitable for applications that require high-frequency operation and efficient light emission.

InP wafers and substrates are typically produced using the liquid-phase epitaxy (LPE) or metalorganic vapor phase epitaxy (MOVPE) techniques. In the LPE method, a seed crystal is dipped into a solution containing InP and a dopant, and a single crystal InP layer is grown on top of the seed crystal. In the MOVPE method, a substrate is placed in a reactor and exposed to a mixture of gaseous precursors, which react and deposit a single crystal InP layer on the substrate.

Once the InP crystal is grown, it is sliced into thin wafers and polished to a high degree of flatness and smoothness. The resulting InP wafers and substrates can then be used as a platform for the growth of additional semiconductor layers, which can be doped with impurities to create p-type and n-type regions for device fabrication.

InP wafers and substrates have several advantages over other semiconductor materials such as silicon. InP has a higher electron mobility than silicon, which means that it can operate at higher frequencies and with lower power consumption. Additionally, InP has a direct bandgap, which allows for efficient light emission and makes it suitable for applications such as lasers and photodiodes.

InP wafers are III-V semiconductor wafers used for the following applications:

  • Fiberoptic components
  • DWDM and VCSEL lasers, pump lasers
  • PIN and APD diodes
  • MMIC Amplifiers
  • HBT high speed circuits
  • HEMT devices for communication, power and automotive applications.
Item Unit Semi-insulating Specifications Semi-conduct Specifications
Conduct Type     n-type/p-type
Crystal Growth Method   VGF VGF
Dopant   Fe S,Sn/Undoped/Zn
Diameter inch 2",3",4" 2",3",4"
Wafer Orientation*   (100)±0.5° (100)±0.5°
Resistivity (at RT) ≥0.5x107  
Carrier Concentration cm-3 N/A (0.8-8)x1018/(1-10)x1015/(0.8-8)x1018
Mobility cm2/v.s ≥1000 1000-2500/3000-5000/50-100
Etch Pit Density (EPD) /cm2 1500-5000 100-5000/≥5000/≥500
Laser Marking   Upon request Upon request
Thickness* μm (350-675)±25 (350-675)±25
TTV (P/P) μm ≤10 ≤10
TTV (P/E) μm ≤15 ≤15
Warp μm ≤15 ≤15
Surface Sides 1 & 2 Polished/Etched Polished/Etched
Epi-ready   Yes Yes
Package   Cassette or single
wafer container
Cassette or single
wafer container

Order Form

Drag and drop files here or Browse
*You can upload your specification file here. Max 5MB. Allowed File Types: JPG, PNG, PDF

About Semiconductor Electronics

SEMI EL project is a global supplier of materials, equipment, spare parts and supplies for the semiconductor industry.

Learn more...

Get In Touch


Join Our Community

Sign up to receive email for the latest information.