Indium phosphide (InP) wafers and substrates are a type of semiconductor material used in the production of high-speed electronic devices and optoelectronic components such as lasers, photodiodes, and solar cells. InP has a high electron mobility and a direct bandgap, which make it suitable for applications that require high-frequency operation and efficient light emission.
InP wafers and substrates are typically produced using the liquid-phase epitaxy (LPE) or metalorganic vapor phase epitaxy (MOVPE) techniques. In the LPE method, a seed crystal is dipped into a solution containing InP and a dopant, and a single crystal InP layer is grown on top of the seed crystal. In the MOVPE method, a substrate is placed in a reactor and exposed to a mixture of gaseous precursors, which react and deposit a single crystal InP layer on the substrate.
Once the InP crystal is grown, it is sliced into thin wafers and polished to a high degree of flatness and smoothness. The resulting InP wafers and substrates can then be used as a platform for the growth of additional semiconductor layers, which can be doped with impurities to create p-type and n-type regions for device fabrication.
InP wafers and substrates have several advantages over other semiconductor materials such as silicon. InP has a higher electron mobility than silicon, which means that it can operate at higher frequencies and with lower power consumption. Additionally, InP has a direct bandgap, which allows for efficient light emission and makes it suitable for applications such as lasers and photodiodes.
InP wafers are III-V semiconductor wafers used for the following applications:
|Item||Unit||Semi-insulating Specifications||Semi-conduct Specifications|
|Crystal Growth Method||VGF||VGF|
|Resistivity (at RT)||ohm.cm||≥0.5x107|
|Etch Pit Density (EPD)||/cm2||1500-5000||100-5000/≥5000/≥500|
|Laser Marking||Upon request||Upon request|
|Surface||Sides 1 & 2||Polished/Etched||Polished/Etched|
|Package||Cassette or single |
|Cassette or single |