SAW Grade LiTaO3 Wafer

SAW Grade LiTaO3 Wafer


SAW Grade LiTaO3 Wafer

LiTaO3 wafers have the properties that allow to use them in a number of applications for SAW and BAW devices. Wafers can have different properties like optical, SAW grade and pyroelectric discharge free or black LN wafers.the 36 and 42-cut LT wafers are widely used in devices for telecom and mobile applications for frequency range 800 to 2200MHz.

SAW (Surface Acoustic Wave) grade Lithium Tantalate (LiTaO3) wafers are a type of single-crystal wafer that is specifically designed for use in surface acoustic wave devices. These wafers are carefully grown and processed to have precise characteristics that are important for achieving optimal SAW device performance.

SAW grade LiTaO3 wafers are typically grown using the Czochralski method, which involves melting a high-purity LiTaO3 crystal and slowly pulling it from the melt to form a single-crystal ingot. The ingot is then sliced into thin wafers, which are polished to a high degree of flatness and surface quality.

The properties of SAW grade LiTaO3 wafers make them ideal for use in SAW devices, which are used in a variety of applications, including telecommunications, sensing, and navigation systems. SAW devices are based on the piezoelectric properties of the crystal, which allows for the conversion of electrical signals into acoustic waves that travel along the surface of the crystal.

SAW grade LiTaO3 wafers have specific characteristics that are optimized for SAW device performance, such as a high electromechanical coupling coefficient and a low temperature coefficient of delay. These properties are critical for achieving high-frequency operation and stable performance over a wide temperature range.

Material LiTaO3 wafers(White or Black 
Curie Temp 603±2℃
Cutting Angle X/Y/Z/X112Y/Y36/Y42/Y48/etc
Diameter/size 3”/4”/6" LT wafer
Tol(±) <0.20 mm="" td="">
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm)  <1µm
TTV  <3µm
Bow -30<bow<30
Warp <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished /Double Sides Polished
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Wafer Surface Criteria Transmissivity general:5.9x10-11<s<2.0*10-10 at 25℃
Contamination, None
Particles ¢>0.3 µ  m <= 30
Scratch , Chipping None
Defect No edge cracks, scratches, saw marks, stains
Packaging Qty/Wafer box 25pcs per box 

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