Sapphire Wafers

Sapphire Wafers

Description

Sapphire Wafers

Sapphire is a very hard material, second after diamond, that has good optical properties. Sapphire wafers are used for epitaxial film growth. Wafers in A-plane are used for microwave ICs and power ICs and sensors, whereas C-plane sapphire substrates are more used in A3B3 compound semiconductor applications for LEDs and laser diodes.

Sapphire wafers are thin, circular disks made from sapphire, a crystalline form of aluminum oxide (Al2O3) that is highly transparent and extremely hard. Sapphire is second only to diamond in terms of hardness, and it has excellent optical and thermal properties.

Sapphire wafers are used in a variety of applications, including semiconductor manufacturing, LED production, and optics. In semiconductor manufacturing, sapphire wafers are used as a substrate for the growth of gallium nitride (GaN) crystals, which are used to make high-power, high-frequency electronic devices such as transistors and LEDs.

In LED production, sapphire wafers are used as a substrate for the growth of gallium nitride (GaN) crystals, which emit light when an electric current is applied. Sapphire is an ideal substrate material for GaN growth because it has a similar crystal structure and thermal expansion coefficient to GaN, which minimizes defects and improves crystal quality.

In optics, sapphire wafers are used as windows and lenses in high-pressure and high-temperature environments, as well as in infrared imaging systems, because of their high transparency and hardness.

Sapphire wafers are typically produced using a process called the Kyropoulos method, which involves melting sapphire powder and then slowly cooling it to form a single crystal. The crystal is then sliced into thin wafers and polished to a high degree of flatness and smoothness.

Item 1-inch C-plane(0001) 430μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 25.4 mm +/- 0.1 mm
Thickness 430 μm +/- 25 μm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 5 μm
BOW < 5 μm
WARP < 5 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Item 2-inch C-plane(0001) 430μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 50.8 mm +/- 0.1 mm
Thickness 430 μm +/- 25 μm
Primary Flat Orientation A-plane(11-20) +/- 0.2°
Primary Flat Length 16.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 10 μm
BOW < 10 μm
WARP < 10 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Item 3-inch C-plane(0001) 500μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 76.2 mm +/- 0.1 mm
Thickness 500 μm +/- 25 μm
Primary Flat Orientation A-plane(11-20) +/- 0.2°
Primary Flat Length 22.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 15 μm
BOW < 15 μm
WARP < 15 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Item 4-inch C-plane(0001) 650μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 100.0 mm +/- 0.1 mm
Thickness 650 μm +/- 25 μm
Primary Flat Orientation A-plane(11-20) +/- 0.2°
Primary Flat Length 30.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 20 μm
BOW < 20 μm
WARP < 20 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Item 5-inch C-plane(0001) 650μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 125.0 mm +/- 0.1 mm
Thickness 650 μm +/- 25 μm
Primary Flat Orientation A-plane(11-20) +/- 0.2°
Primary Flat Length 42.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 20 μm
BOW < 20 μm
WARP < 20 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging, single piece packaging.
Item 6-inch C-plane(0001) 1300μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 150.0 mm +/- 0.2 mm
Thickness 1300 μm +/- 25 μm
Primary Flat Orientation A-plane(11-20) +/- 0.2°
Primary Flat Length 47.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 25 μm
BOW < 25 μm
WARP < 25 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Item 8-inch C-plane(0001) 1300μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 200.0 mm +/- 0.2 mm
Thickness 1300 μm +/- 25 μm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 30 μm
BOW < 30 μm
WARP < 30 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

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