Description
Sapphire is a very hard material, second after diamond, that has good optical properties. Sapphire wafers are used for epitaxial film growth. Wafers in A-plane are used for microwave ICs and power ICs and sensors, whereas C-plane sapphire substrates are more used in A3B3 compound semiconductor applications for LEDs and laser diodes.
Sapphire wafers are thin, circular disks made from sapphire, a crystalline form of aluminum oxide (Al2O3) that is highly transparent and extremely hard. Sapphire is second only to diamond in terms of hardness, and it has excellent optical and thermal properties.
Sapphire wafers are used in a variety of applications, including semiconductor manufacturing, LED production, and optics. In semiconductor manufacturing, sapphire wafers are used as a substrate for the growth of gallium nitride (GaN) crystals, which are used to make high-power, high-frequency electronic devices such as transistors and LEDs.
In LED production, sapphire wafers are used as a substrate for the growth of gallium nitride (GaN) crystals, which emit light when an electric current is applied. Sapphire is an ideal substrate material for GaN growth because it has a similar crystal structure and thermal expansion coefficient to GaN, which minimizes defects and improves crystal quality.
In optics, sapphire wafers are used as windows and lenses in high-pressure and high-temperature environments, as well as in infrared imaging systems, because of their high transparency and hardness.
Sapphire wafers are typically produced using a process called the Kyropoulos method, which involves melting sapphire powder and then slowly cooling it to form a single crystal. The crystal is then sliced into thin wafers and polished to a high degree of flatness and smoothness.
Item | 1-inch C-plane(0001) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 25.4 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 5 μm | |
BOW | < 5 μm | |
WARP | < 5 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 2-inch C-plane(0001) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 3-inch C-plane(0001) 500μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 76.2 mm +/- 0.1 mm | |
Thickness | 500 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 22.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 15 μm | |
BOW | < 15 μm | |
WARP | < 15 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 4-inch C-plane(0001) 650μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 100.0 mm +/- 0.1 mm | |
Thickness | 650 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 30.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 20 μm | |
BOW | < 20 μm | |
WARP | < 20 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 5-inch C-plane(0001) 650μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 125.0 mm +/- 0.1 mm | |
Thickness | 650 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 42.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 20 μm | |
BOW | < 20 μm | |
WARP | < 20 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, single piece packaging. |
Item | 6-inch C-plane(0001) 1300μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 150.0 mm +/- 0.2 mm | |
Thickness | 1300 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 47.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 25 μm | |
BOW | < 25 μm | |
WARP | < 25 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 8-inch C-plane(0001) 1300μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 200.0 mm +/- 0.2 mm | |
Thickness | 1300 μm +/- 25 μm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 30 μm | |
BOW | < 30 μm | |
WARP | < 30 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
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