Sn-doped β-Ga2O3 Wafers and Substrates

Description

Sn-doped β-Ga2O3 wafers are a type of semiconductor wafer made from β-Ga2O3 crystal that has been doped with tin (Sn) impurities. β-Ga2O3, also known as beta gallium oxide, is a wide-bandgap semiconductor material with a bandgap energy of around 4.9 eV, which makes it suitable for applications such as high-power electronics, power conversion, and optoelectronics.

Sn-doped β-Ga2O3 wafers have several advantages over other semiconductor materials such as silicon and gallium nitride. Firstly, β-Ga2O3 has a much wider bandgap than these materials, which means that it can withstand higher voltages and temperatures without breaking down. Secondly, the addition of tin dopants to β-Ga2O3 can increase its electrical conductivity and improve its performance as a semiconductor.

Sn-doped β-Ga2O3 wafers are typically grown using the epitaxial growth technique, where a thin layer of β-Ga2O3 is deposited on a substrate material such as sapphire or silicon. The Sn dopants are introduced into the crystal during the growth process, and the resulting wafer is then polished to a high degree of flatness and smoothness.

Sn-doped β-Ga2O3 wafers are being researched for a range of applications, including power electronics, photovoltaics, and UV photodetectors. They have the potential to enable the development of more efficient and compact devices with higher power densities and operating temperatures.

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